(A) study on active-matrix fiber-based pressure sensor with atomic layer deposition processed oxide thin-film diode

Abstract

Wearable devices have been getting an enormous amount of attention as a next-generation, smart electronics which can connect human and electronic devices. Countless researches on fibertronic devices are ongoing with much of its focus on fiber-based sensors, memory devices, energy storage devices, since they are relatively easy to be applied to. Here, we present an AM fibertronic pressure sensor that can overcome this issue by implementing a simpler-structured 2-terminal oxide thin-film diode on adapted fiber configurations. The switching fiber was fabricated on a process-friendly fiber of rectangular stripes by photolithography and showed a near-perfect uniformity with an on/off ratio of ~10$^8$, off-current of 7.71 × 10$^{-8}$ A/cm$^2$, on-current of 4.31 × 10$^{-1}$ A/cm$^2$, and a turn-on voltage of 0.147 V. A woven textile of the switching fiber with perpendicularly arranged contact-resistive PDMS hollow sensing fiber to form an AM pressure sensor array with extremely high sensitivity of 11.63 kPa$^{‑1}$ and high contrast.