DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Hojun | ko |
dc.contributor.author | Lee, Sang Yeon | ko |
dc.contributor.author | Lee, Jeongsu | ko |
dc.contributor.author | Kim, Sunjin | ko |
dc.contributor.author | Sul, Onejae | ko |
dc.contributor.author | Seo, Hyungtak | ko |
dc.contributor.author | Lee, Seung-Beck | ko |
dc.date.accessioned | 2022-04-13T06:45:30Z | - |
dc.date.available | 2022-04-13T06:45:30Z | - |
dc.date.created | 2022-03-10 | - |
dc.date.created | 2022-03-10 | - |
dc.date.created | 2022-03-10 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.33, no.20 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/292540 | - |
dc.description.abstract | Low-temperature process compatibility is a key factor in successfully constructing additional functional circuits on top of pre-existing circuitry without corrupting characteristics thereof, a technique that typically requires die-to-die (wafer-to-wafer) stacking and interconnecting. And against thermal annealing, which is mandatory and is possible only globally for activating amorphous oxide semiconductors, the selective control of electrical characteristics of the oxide thin-films for integrated circuit applications is challenging. Here, a low-temperature process that enables n-type doping of the designed region of insulating In2O3 thin-film is demonstrated. A short hydrogen plasma treatment followed by low-temperature annealing is used to increase interstitial and substitutional hydrogen associated bond states creating shallow donor levels in the insulating In2O3 surface to transform the thin-film into an n-type semiconductor. As a result, an In2O3 thin-film transistor with a high on/off current ratio (>10(8)), a field-effect mobility of 3.8 cm(2) V-1 s(-1), and a threshold voltage of similar to 3.0 V has been developed. Compared to performing just thermal annealing, the H-plasma assisted annealing process resulted in an n-type In2O3 thin-film transistor showing similar characteristics, while the processing time was reduced by similar to 1/3 and the plasma-untreated area still remained insulating. With further development, the hydrogen plasma doping process may make possible a monolithic planar process technology for amorphous oxide semiconductors. | - |
dc.language | English | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Low-temperature n-type doping of insulating ultrathin amorphous indium oxide using H plasma-assisted annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000758431700001 | - |
dc.identifier.scopusid | 2-s2.0-85125020470 | - |
dc.type.rims | ART | - |
dc.citation.volume | 33 | - |
dc.citation.issue | 20 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/1361-6528/ac51ac | - |
dc.contributor.localauthor | Lee, Sang Yeon | - |
dc.contributor.nonIdAuthor | Seo, Hojun | - |
dc.contributor.nonIdAuthor | Lee, Jeongsu | - |
dc.contributor.nonIdAuthor | Kim, Sunjin | - |
dc.contributor.nonIdAuthor | Sul, Onejae | - |
dc.contributor.nonIdAuthor | Seo, Hyungtak | - |
dc.contributor.nonIdAuthor | Lee, Seung-Beck | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | oxide semiconductors | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | In2O3 | - |
dc.subject.keywordAuthor | doping | - |
dc.subject.keywordAuthor | low temperature fabrication | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | FABRICATION | - |
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