DC Field | Value | Language |
---|---|---|
dc.contributor.author | Das, Dipjyoti | ko |
dc.contributor.author | Khan, Asif Islam | ko |
dc.date.accessioned | 2021-10-05T02:50:12Z | - |
dc.date.available | 2021-10-05T02:50:12Z | - |
dc.date.created | 2021-10-05 | - |
dc.date.created | 2021-10-05 | - |
dc.date.created | 2021-10-05 | - |
dc.date.issued | 2021-10 | - |
dc.identifier.citation | IEEE NANOTECHNOLOGY MAGAZINE, v.15, no.5, pp.20 - 32 | - |
dc.identifier.issn | 1932-4510 | - |
dc.identifier.uri | http://hdl.handle.net/10203/287995 | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Ferroelectricity in CMOS-Compatible Hafnium Oxides Reviving the ferroelectric field-effect transistor technology | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-85113245978 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 20 | - |
dc.citation.endingpage | 32 | - |
dc.citation.publicationname | IEEE NANOTECHNOLOGY MAGAZINE | - |
dc.identifier.doi | 10.1109/MNANO.2021.3098218 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Das, Dipjyoti | - |
dc.contributor.nonIdAuthor | Khan, Asif Islam | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | MEMORY DEVICE | - |
dc.subject.keywordPlus | GATE-LAST | - |
dc.subject.keywordPlus | FATIGUE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | INTERLAYER | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | FUTURE | - |
dc.subject.keywordPlus | FILMS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.