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Ferroelectricity in CMOS-Compatible Hafnium Oxides Reviving the ferroelectric field-effect transistor technology

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dc.contributor.authorDas, Dipjyotiko
dc.contributor.authorKhan, Asif Islamko
dc.date.accessioned2021-10-05T02:50:12Z-
dc.date.available2021-10-05T02:50:12Z-
dc.date.created2021-10-05-
dc.date.created2021-10-05-
dc.date.created2021-10-05-
dc.date.issued2021-10-
dc.identifier.citationIEEE NANOTECHNOLOGY MAGAZINE, v.15, no.5, pp.20 - 32-
dc.identifier.issn1932-4510-
dc.identifier.urihttp://hdl.handle.net/10203/287995-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleFerroelectricity in CMOS-Compatible Hafnium Oxides Reviving the ferroelectric field-effect transistor technology-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-85113245978-
dc.type.rimsART-
dc.citation.volume15-
dc.citation.issue5-
dc.citation.beginningpage20-
dc.citation.endingpage32-
dc.citation.publicationnameIEEE NANOTECHNOLOGY MAGAZINE-
dc.identifier.doi10.1109/MNANO.2021.3098218-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorDas, Dipjyoti-
dc.contributor.nonIdAuthorKhan, Asif Islam-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusNEGATIVE CAPACITANCE-
dc.subject.keywordPlusMEMORY DEVICE-
dc.subject.keywordPlusGATE-LAST-
dc.subject.keywordPlusFATIGUE-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordPlusINTERLAYER-
dc.subject.keywordPlusIMPACT-
dc.subject.keywordPlusFUTURE-
dc.subject.keywordPlusFILMS-
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