A photo-cross-linkable polymeric binder for silicon anodes in lithium ion batteries

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dc.contributor.authorPark, Yuwonko
dc.contributor.authorLee, Sueunko
dc.contributor.authorKim, Si-Hoonko
dc.contributor.authorJang, Bo Yunko
dc.contributor.authorKim, Joon Sooko
dc.contributor.authorOh, Seung M.ko
dc.contributor.authorKim, Ju-Youngko
dc.contributor.authorChoi, Nam-Soonko
dc.contributor.authorLee, Kyu Taeko
dc.contributor.authorKim, Byeong-Suko
dc.date.accessioned2021-08-20T07:31:12Z-
dc.date.available2021-08-20T07:31:12Z-
dc.date.created2021-08-20-
dc.date.created2021-08-20-
dc.date.created2021-08-20-
dc.date.issued2013-
dc.identifier.citationRSC ADVANCES, v.3, no.31, pp.12625 - 12630-
dc.identifier.issn2046-2069-
dc.identifier.urihttp://hdl.handle.net/10203/287359-
dc.description.abstractA new photo-cross-linkable poly(acrylic acid) (PAA) polymer functionalized with a photoreactive benzophenone group (PAA-BP) was synthesized and examined as a binder for Si-based anodes. Upon UV irradiation, the PAA-BP binders formed an irreversible cross-linked structure through the formation of a new three-dimensional C-C bond network between the benzophenone moiety and the PAA backbone. The photo-cross-linked PAA-BP binder demonstrated a marginal volume expansion (38%) after full lithiation, compared to conventional binders and this resulted in an improved cycle performance of the Si anode over 100 cycles with a high reversible capacity of ca. 1600 mA h g(-1). We attributed this phenomenon to the enhanced mechanical properties of the photo-cross-linked PAA-BP binder, which were evaluated using nanoindentation and swelling measurements.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleA photo-cross-linkable polymeric binder for silicon anodes in lithium ion batteries-
dc.typeArticle-
dc.identifier.wosid000321791200018-
dc.identifier.scopusid2-s2.0-84880568737-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue31-
dc.citation.beginningpage12625-
dc.citation.endingpage12630-
dc.citation.publicationnameRSC ADVANCES-
dc.identifier.doi10.1039/c3ra42447b-
dc.contributor.localauthorChoi, Nam-Soon-
dc.contributor.nonIdAuthorPark, Yuwon-
dc.contributor.nonIdAuthorLee, Sueun-
dc.contributor.nonIdAuthorKim, Si-Hoon-
dc.contributor.nonIdAuthorJang, Bo Yun-
dc.contributor.nonIdAuthorKim, Joon Soo-
dc.contributor.nonIdAuthorOh, Seung M.-
dc.contributor.nonIdAuthorKim, Ju-Young-
dc.contributor.nonIdAuthorLee, Kyu Tae-
dc.contributor.nonIdAuthorKim, Byeong-Su-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusNEGATIVE ELECTRODES-
dc.subject.keywordPlusNANOSTRUCTURED SILICON-
dc.subject.keywordPlusSI ELECTRODES-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusSTORAGE-
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