Interfacial trap effects in InAs gate-all-around nanowire tunnel field-effect transistors: first-principles-based approach
- Publisher
- IWCN2021
- Issue Date
- 2021-05
- Language
- English
- Citation
IWCN2021
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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