Low actuation voltage toggle MEMS switch for power gating application

Abstract

In the modern era, the development of semiconductors is progressing toward miniaturization and high integration, and along with that, the leakage power is increasing significantly, so the importance of technologies for reducing leakage power is increasing as semiconductor technology develops. As a power gating switch suitable for power gating technology, which is a technology for reducing leakage power in integrated circuits, there are requirements for low driving voltage, low on resistance, and low leakage current, and MEMS switch suitable for these characteristics is to be applied to power gating technology. In this study, we proposed a special structure and operation principle to overcome the stiction in order to develop a MEMS switch that has a very low driving voltage and a low on resistance by using a toggle mechanism. In addition, the feasibility of implementation was confirmed through the appropriate design and simulation, and the device was manufactured through the appropriate process, and the proposed method of driving the device was verified through performance evaluation.