(A) study of contact properties between Al-based source/drain and indium oxide active layer in top-gate bottom-contact structured thin-film transistors for vertical-TFT수직 채널 트랜지스터용 탑 게이트 하단 접촉 구조 박막 트랜지스터에서 알루미늄 기반 소스/드레인과 인듐 산화물 활성층 사이의 접촉 특성 연구

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In this work, we investigate the contact properties between low resistive Al-based source/drain (S/D) and InOx active layer in top-gate bottom-contact structured thin-film transistors (TFTs) for vertical-TFT (V-TFT). V-TFT is the promising structure for the development of next generation displays with the smallest pixel pitch values. In addition, improving RC delay in high-resolution pixel arrays requires the introduction of low resistive metal. Since Cu is difficult to dry-etch in fine sized patterns, Al is advantageous in terms of resistivity and process. However, V-TFT is the bottom-contact structure where oxide semiconductor is deposited after S/D process. This causes the oxidation of Al and degrades the contact properties. Therefore, we fabricated top-gate bottom-contact structured TFTs, which are the mimic structure of V-TFT, and analyzed their electrical characteristics. Mo/Al/Mo and Ti/Al/Ti S/D were applied to the device as Al-based electrodes. The quantitative analysis of the contact resistance between InOx and the Al-based S/D and the thin-film analysis were performed to determine the factors affecting the bottom-contact properties.
Advisors
Park, Sang-Heeresearcher박상희researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2020
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2020.2,[vii, 76 p. :]

Keywords

Low resistive Al-based metal▼aContact resistance▼aBottom-contact structure▼aOxide thin-film transistor▼aVertical thin-film transistor; 저저항 알루미늄 기반 금속▼a접촉 저항▼a하단 접촉 구조▼a산화물 박막 트랜지스터▼a수직 채널 트랜지스터

URI
http://hdl.handle.net/10203/283880
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=909973&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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