DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Han Bin | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Kim, Junyeap | ko |
dc.contributor.author | Yu, Jintae | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.contributor.author | Kim, Dong Myong | ko |
dc.date.accessioned | 2021-03-26T02:54:55Z | - |
dc.date.available | 2021-03-26T02:54:55Z | - |
dc.date.created | 2020-02-10 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.20, no.7, pp.4287 - 4291 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/281998 | - |
dc.description.abstract | We report an experimental characterization of the interface states (D-it(E)) by using the subthreshold drain current with optical charge pumping effect in In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). The interface states are derived from the difference between the dark and photo states of the current-voltage characteristics. We used a sub-bandgap photon (i.e., with the photon energy lower than the bandgap energy, E-ph < E-g) to optically excite trapped carriers over the bandgap in In0.53Ga0.47As MOSFETs. We combined a gate bias-dependent capacitance model to determine the channel length-independent oxide capacitance. Then, we estimated the channel length-independent interface states in In0.53Ga0.47As MOSFETs having different channel lengths (L-ch = 5, 10, and 25 [mu m]) for a fixed overlap length (L-ov = 5 [mu m]). | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000508646300051 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 4287 | - |
dc.citation.endingpage | 4291 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2020.17785 | - |
dc.contributor.nonIdAuthor | Yoo, Han Bin | - |
dc.contributor.nonIdAuthor | Kim, Junyeap | - |
dc.contributor.nonIdAuthor | Yu, Jintae | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.contributor.nonIdAuthor | Kim, Dong Myong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | Interface State | - |
dc.subject.keywordAuthor | Optical Charge Pumping | - |
dc.subject.keywordAuthor | Ideality Factor | - |
dc.subject.keywordAuthor | Overlap Capacitance | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | DOS | - |
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