Topology and electron scattering properties of the electronic interfaces in epitaxial graphene probed by resonant tunneling spectroscopy

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Z-V scanning tunneling spectroscopy is used to probe the topology and electron scattering properties of the electronic interfaces of monolayer and bilayer graphenes, expitaxially grown on SiC(0001). The dZ/dV spectra validate existing calculations of the interface topology and provide evidence for new electron scattering properties due to changes in the electronic character of the bonding. Two sharp boundaries are observed: between the vacuum and the graphene pi state lying above the graphene atom plane and a subsurface barrier between the carbon-rich layer and the bulk SiC.
Publisher
AMER PHYSICAL SOC
Issue Date
2008-07
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW B, v.78, no.4, pp.041408

ISSN
1098-0121
DOI
10.1103/PhysRevB.78.041408
URI
http://hdl.handle.net/10203/280263
Appears in Collection
PH-Journal Papers(저널논문)
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