Researcher Page

Yang, Heejun (양희준)
부교수, Department of Physics(물리학과)
Research Area
Quantum devices, Energy devices, Neuromorphic devices
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe2

    Nadvornik, Lukas; Gueckstock, Oliver; Braun, Lukas; et al, ADVANCED MATERIALS INTERFACES, v.9, no.36, 2022-12

    Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9

    Noh, Gichang; Song, Hwayoung; Choi, Heenang; et al, ADVANCED MATERIALS, v.34, no.41, 2022-10

    Local phase transition at crack edges of Mo1-xWxTe2 polymorphs

    Lee, Ha Heun; Lim, Eunji; Kang, Seohui; et al, APPLIED SURFACE SCIENCE, v.596, 2022-09

    Recent Progress in 1D Contacts for 2D-Material-Based Devices

    Choi, Min Sup; Ali, Nasir; Ngo, Tien Dat; et al, ADVANCED MATERIALS, v.34, no.39, 2022-09

    2D materials and van der Waals heterojunctions for neuromorphic computing

    Zhang, Zirui; Yang, Dongliang; Li, Huihan; et al, Neuromorphic Computing and Engineering, v.2, no.3, 2022-09

    Atomic-scale thermopower in charge density wave states

    Kim, Dohyun; Shin, Eui-Cheol; Lee, Yongjoon; et al, NATURE COMMUNICATIONS, v.13, no.1, 2022-08

    Invariable resistance of conductive nanocomposite over 30% strain

    Ajmal, C. Muhammed; Cha, Seokjae; Kim, Wonjoon; et al, SCIENCE ADVANCES, v.8, no.32, 2022-08

    Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs

    Eshete, Yonas Assefa; Kang, Kyungrok; Kang, Seunghun; et al, ADVANCED MATERIALS, v.34, no.31, 2022-08

    Efficient hydrogen evolution reaction at the phase transition boundary of polymorphic Mo1-xWxTe2

    Kim, Jeong Hyo; Lee, Da Yeon; Eshete, Yonas Assefa; et al, APL MATERIALS, v.10, no.6, 2022-06

    Heterophase Boundary for Active Hydrogen Evolution in MoTe2

    Lee, Yongjoon; Ling, Ning; Kim, Dohyun; et al, ADVANCED FUNCTIONAL MATERIALS, v.32, no.10, 2022-03

    Orbital Gating Driven by Giant Stark Effect in Tunneling Phototransistors

    Kim, Eunah; Hwang, Geunwoo; Kim, Dohyun; et al, ADVANCED MATERIALS, v.34, no.6, 2022-02

    Bandgap modulation in the two-dimensional core-shell-structured monolayers of WS2

    Kang, Seohui; Eshete, Yonas Assefa; Lee, Sujin; et al, ISCIENCE, v.25, no.1, 2022-01

    Reshaped Weyl fermionic dispersions driven by Coulomb interactions in MoTe2

    Kang, Seoung-Hun; Jeon, Sangjun; Kim, Hyun-Jung; et al, PHYSICAL REVIEW B, v.105, no.4, 2022-01

    Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

    Nguyen, Duc Anh; Park, Dae Young; Duong, Ngoc Thanh; et al, SMALL METHODS, v.5, no.11, 2021-11

    Robust Quantum Oscillation of Dirac Fermions in a Single-Defect Resonant Transistor

    Zheng, Shoujun; Joo, Yanggeun; Zhao, Mali; et al, ACS NANO, v.15, no.12, pp.20013 - 20019, 2021-11

    Phase-controllable laser thinning in MoTe2

    Kang, Seohui; Won, Dongyeun; Yang, Heejunresearcher; et al, APPLIED SURFACE SCIENCE, v.563, 2021-10

    Hydrogen bubble-assisted growth of Pt3Te4 for electrochemical catalysts

    Bae, Dongyeon; Kim, Jeong Hyo; Kwon, Hagyeong; et al, CURRENT APPLIED PHYSICS, v.30, pp.20 - 26, 2021-10

    Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

    Nguyen, Duc Anh; Park, Dae Young; Lee, Juchan; et al, NANO ENERGY, v.86, pp.106049, 2021-08

    Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

    Ghimire, Ganesh; Dhakal, Krishna P.; Choi, Wooseon; et al, ACS NANO, v.15, no.8, pp.13770 - 13780, 2021-08

    Near-field probing of dielectric screening by hexagonal boron nitride in graphene integrated on silicon photonics

    Wang, Binbin; Kim, Sera; Zhai, Tingting; et al, NANOTECHNOLOGY, v.32, no.31, 2021-07

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