Passivation of Metal Surface States: Microscopic Origin for Uniform Mono layer Graphene by Low Temperature Chemical Vapor Deposition

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Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to Investigate the surface morphology and electronic structure of graphene synthesized on Cu by low temperature chemical vapor deposition (CVD). Periodic line patterns originating from the arrangements of carbon atoms on the Cu surface passivate the Interaction between metal substrate and graphene, resulting in flawless inherent graphene band structure in pristine graphene/Cu. The effective elimination of metal surface states by the passivation Is expected to contribute to the growth of monolayer graphene on Cu, which yields highly enhanced uniformity on the wafer scale, making progress toward the commercial application of graphene.
Publisher
AMER CHEMICAL SOC
Issue Date
2011-03
Language
English
Article Type
Article
Citation

ACS NANO, v.5, no.3, pp.1915 - 1920

ISSN
1936-0851
DOI
10.1021/nn102916c
URI
http://hdl.handle.net/10203/280257
Appears in Collection
PH-Journal Papers(저널논문)
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