Ultrashort Vertical-Channel van der Waals Semiconductor Transistors

Cited 24 time in webofscience Cited 11 time in scopus
  • Hit : 209
  • Download : 114
Atomically thin 2D van der Waals semiconductors are promising candidates for next-generation nanoscale field-effect transistors (FETs). Although large-area 2D van der Waals materials have been successfully synthesized, such nanometer-length-scale devices have not been well demonstrated in 2D van der Waals semiconductors. Here, controllable nanometer-scale transistors with a channel length of approximate to 10 nm are fabricated via vertical channels by squeezing an ultrathin insulating spacer between the out-of-plane source and drain electrodes, and the feasibility of high-density and large-scale fabrication is demonstrated. A large on-current density of approximate to 70 mu A mu m(-1) nm(-1) at a source-drain voltage of 0.5 V and a high on/off ratio of approximate to 10(7)-10(9) are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition. The work provides a promising route toward the complementary metal-oxide-semiconductor-compatible fabrication of wafer-scale 2D van der Waals transistors with high-density integration.
Publisher
WILEY
Issue Date
2020-02
Language
English
Article Type
Article
Citation

ADVANCED SCIENCE, v.7, no.4

ISSN
2198-3844
DOI
10.1002/advs.201902964
URI
http://hdl.handle.net/10203/280185
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
117989.pdf(1.74 MB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 24 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0