Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

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The high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n(+)-n(-)-n(+) Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H-2) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H-2 sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H-2-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H-2 sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H-2 sensing.
Publisher
AMER CHEMICAL SOC
Issue Date
2020-08
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.12, no.33, pp.37128 - 37136

ISSN
1944-8244
DOI
10.1021/acsami.0c08977
URI
http://hdl.handle.net/10203/276387
Appears in Collection
ME-Journal Papers(저널논문)
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