Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

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dc.contributor.authorGao, Minko
dc.contributor.authorZhao, Zhi-Junko
dc.contributor.authorKim, Hyeonggyunko
dc.contributor.authorJin, Mingliangko
dc.contributor.authorLi, Panpanko
dc.contributor.authorKim, Taehwanko
dc.contributor.authorKang, Kyungnamko
dc.contributor.authorCho, Incheolko
dc.contributor.authorJeong, Jun-Hoko
dc.contributor.authorPark, Inkyuko
dc.date.accessioned2020-09-22T06:55:12Z-
dc.date.available2020-09-22T06:55:12Z-
dc.date.created2020-09-14-
dc.date.created2020-09-14-
dc.date.created2020-09-14-
dc.date.issued2020-08-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.12, no.33, pp.37128 - 37136-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/276387-
dc.description.abstractThe high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n(+)-n(-)-n(+) Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H-2) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H-2 sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H-2-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H-2 sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H-2 sensing.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleBuffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors-
dc.typeArticle-
dc.identifier.wosid000563074900030-
dc.identifier.scopusid2-s2.0-85089714578-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue33-
dc.citation.beginningpage37128-
dc.citation.endingpage37136-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/acsami.0c08977-
dc.contributor.localauthorPark, Inkyu-
dc.contributor.nonIdAuthorZhao, Zhi-Jun-
dc.contributor.nonIdAuthorKim, Hyeonggyun-
dc.contributor.nonIdAuthorJin, Mingliang-
dc.contributor.nonIdAuthorLi, Panpan-
dc.contributor.nonIdAuthorKim, Taehwan-
dc.contributor.nonIdAuthorJeong, Jun-Ho-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorthin film sensor-
dc.subject.keywordAuthorhydrogen sensor-
dc.subject.keywordAuthorbuffered oxide etchant-
dc.subject.keywordAuthorpalladium nanoparticles-
dc.subject.keywordAuthorsurface roughness-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTOR-
dc.subject.keywordPlusSENSING PROPERTIES-
dc.subject.keywordPlusNANOWIRE-
dc.subject.keywordPlusNANOSENSORS-
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ME-Journal Papers(저널논문)
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