단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 입체 단위 모스펫TOTAL IONIZATION DOSE EFFECT AND SINGLE EVENT EFFECT HARDENED THREE DIMENSIONAL MOSFET STRUCTURE

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Assignee
한국과학기술원
Country
CH (Switzerland)
Application Date
2019-04-03
Application Number
108111955
Registration Date
2020-09-01
Registration Number
I703676
URI
http://hdl.handle.net/10203/276260
Appears in Collection
EE-Patent(특허)
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