단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 입체 단위 모스펫TOTAL IONIZATION DOSE EFFECT AND SINGLE EVENT EFFECT HARDENED THREE DIMENSIONAL MOSFET STRUCTURE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이희철 | ko |
| dc.contributor.author | 노영탁 | ko |
| dc.date.accessioned | 2020-09-18T04:25:15Z | - |
| dc.date.available | 2020-09-18T04:25:15Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/276260 | - |
| dc.title | 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 입체 단위 모스펫 | - |
| dc.title.alternative | TOTAL IONIZATION DOSE EFFECT AND SINGLE EVENT EFFECT HARDENED THREE DIMENSIONAL MOSFET STRUCTURE | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 이희철 | - |
| dc.contributor.nonIdAuthor | 노영탁 | - |
| dc.contributor.assignee | 한국과학기술원 | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 108111955 | - |
| dc.identifier.patentRegistrationNumber | I703676 | - |
| dc.date.application | 2019-04-03 | - |
| dc.date.registration | 2020-09-01 | - |
| dc.publisher.country | CH | - |
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