MoO3 Nanoparticle Doped NiOx as a Hole Injection Layer for OLEDs
Nickel (II) oxide (NiOx) is the p-type semiconductor material which has wide-bandgap (∼3.7 eV). Excellent material properties of NiOx make it possible to use NiOx as hole injection layer (HIL) for many optoelectronic devices. In this work, we introduce charge transfer doing in NiOx by MoO3 nanoparticles blending.
- Publisher
- International Display Workshops
- Issue Date
- 2018-12-13
- Language
- English
- Citation
25th International Display Workshops, IDW 2018, pp.701 - 703
- ISSN
- 1883-2490
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
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