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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

MoO3 Nanoparticle Doped NiOx as a Hole Injection Layer for OLEDs

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dc.contributor.authorKim, Moohyunko
dc.contributor.authorJung, Yeon Sikko
dc.contributor.authorCho, Myeong-seonko
dc.contributor.authorJeon, Duk Youngko
dc.date.accessioned2020-03-20T01:20:28Z-
dc.date.available2020-03-20T01:20:28Z-
dc.date.created2020-01-15-
dc.date.created2020-01-15-
dc.date.issued2018-12-13-
dc.identifier.citation25th International Display Workshops, IDW 2018, pp.701 - 703-
dc.identifier.issn1883-2490-
dc.identifier.urihttp://hdl.handle.net/10203/273325-
dc.description.abstractNickel (II) oxide (NiOx) is the p-type semiconductor material which has wide-bandgap (∼3.7 eV). Excellent material properties of NiOx make it possible to use NiOx as hole injection layer (HIL) for many optoelectronic devices. In this work, we introduce charge transfer doing in NiOx by MoO3 nanoparticles blending.-
dc.languageEnglish-
dc.publisherInternational Display Workshops-
dc.titleMoO3 Nanoparticle Doped NiOx as a Hole Injection Layer for OLEDs-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85072126886-
dc.type.rimsCONF-
dc.citation.beginningpage701-
dc.citation.endingpage703-
dc.citation.publicationname25th International Display Workshops, IDW 2018-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationNagoya-
dc.contributor.localauthorJung, Yeon Sik-
dc.contributor.localauthorJeon, Duk Young-
dc.contributor.nonIdAuthorCho, Myeong-seon-
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MS-Conference Papers(학술회의논문)
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