A 320μV-Output Ripple and 90ns-Settling Time at 0.5V Supply Digital-Analog-Hybrid LDO Using Multi-Level Gate-Voltage Generator and Fast-Decision PD Detector

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dc.contributor.authorLim, Younghyunko
dc.contributor.authorLee, Jeonghyunko
dc.contributor.authorLee, Yongsunko
dc.contributor.authorYoo, Seyeonko
dc.contributor.authorChoi, Jaehyoukko
dc.date.accessioned2019-12-13T12:29:02Z-
dc.date.available2019-12-13T12:29:02Z-
dc.date.created2019-11-19-
dc.date.created2019-11-19-
dc.date.issued2018-09-05-
dc.identifier.citation44th IEEE European Solid State Circuits Conference, ESSCIRC 2018, pp.94 - 97-
dc.identifier.urihttp://hdl.handle.net/10203/269566-
dc.description.abstractThis work presents a digital-analog-hybrid LDO (HLDO) using a multi-level gate-voltage generator (MGG) to achieve a small output ripple (VR) and a fast-transient response. Using the MGG that can partially turn on transistors in the power MOSFET (Mp) and thus reduce Mp's LSB current, VR was limited to less than 320 μV. Also, a fast-decision PD detector having a non-zero decision level expedited the switching of transistors in Mp, thereby reducing the settling time to less than 90 ns.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA 320μV-Output Ripple and 90ns-Settling Time at 0.5V Supply Digital-Analog-Hybrid LDO Using Multi-Level Gate-Voltage Generator and Fast-Decision PD Detector-
dc.typeConference-
dc.identifier.wosid000448159800051-
dc.identifier.scopusid2-s2.0-85056786350-
dc.type.rimsCONF-
dc.citation.beginningpage94-
dc.citation.endingpage97-
dc.citation.publicationname44th IEEE European Solid State Circuits Conference, ESSCIRC 2018-
dc.identifier.conferencecountryGE-
dc.identifier.conferencelocationDresden-
dc.identifier.doi10.1109/ESSCIRC.2018.8494243-
dc.contributor.localauthorChoi, Jaehyouk-
dc.contributor.nonIdAuthorLim, Younghyun-
dc.contributor.nonIdAuthorLee, Jeonghyun-
dc.contributor.nonIdAuthorLee, Yongsun-
dc.contributor.nonIdAuthorYoo, Seyeon-
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