DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Jong Beom | ko |
dc.contributor.author | Lee, Seung-Hee | ko |
dc.contributor.author | Park, Kyung Woo | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2019-12-13T01:25:39Z | - |
dc.date.available | 2019-12-13T01:25:39Z | - |
dc.date.created | 2019-12-09 | - |
dc.date.created | 2019-12-09 | - |
dc.date.issued | 2019-11 | - |
dc.identifier.citation | RSC ADVANCES, v.9, no.62, pp.36293 - 36300 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | http://hdl.handle.net/10203/268818 | - |
dc.description.abstract | Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use in the backplanes of high-end displays. Although SiNx is an appropriate candidate for use in the gate insulators (GIs) of high-performance driving TFTs, direct deposition of SiNx on top of high-mobility oxide semiconductors is impossible due to significant hydrogen (H) incorporation. In this study, we used AlOx deposited by thermal atomic layer deposition (T-ALD) as the first GI, as it has good H barrier characteristics. During the T-ALD, however, a small amount of H from H2O can also be incorporated into the adjacent active layer. In here, we performed O-2 or N2O plasma treatment just prior to the T-ALD process to control the carrier density, and utilized H to passivate the defects rather than generate free carriers. While the TFT fabricated without plasma treatment exhibited conductive characteristics, both O-2 and N2O plasma-treated TFTs exhibited good transfer characteristics, with a V-th of 2 V and high mobility (similar to 30 cm(2) V-1 s(-1)). Although the TFT with a plasma-enhanced atomic layer deposited (PE-ALD) GI exhibited reasonable on/off characteristics, even without any plasma treatment, it exhibited poor stability. In contrast, the O-2 plasma-treated TFT with T-ALD GI exhibited outstanding stability, i.e., a V-th shift of 0.23 V under positive-bias temperature stress for 10 ks and a current decay of 1.2% under current stress for 3 ks. Therefore, the T-ALD process for GI deposition can be adopted to yield high-mobility, high-stability top-gate-structured oxide TFTs under O-2 or N2O plasma treatment. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000497825500046 | - |
dc.identifier.scopusid | 2-s2.0-85074967869 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 62 | - |
dc.citation.beginningpage | 36293 | - |
dc.citation.endingpage | 36300 | - |
dc.citation.publicationname | RSC ADVANCES | - |
dc.identifier.doi | 10.1039/c9ra06960g | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Park, Kyung Woo | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | DEVICE PERFORMANCE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | DIFFUSION | - |
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