DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Sanghyun | ko |
dc.contributor.author | Simon, John | ko |
dc.contributor.author | Schulte, Kevin L. | ko |
dc.contributor.author | Ptak, Aaron J. | ko |
dc.contributor.author | Wi, Jung-Sub | ko |
dc.contributor.author | Young, David L. | ko |
dc.contributor.author | Oh, Jihun | ko |
dc.date.accessioned | 2019-08-05T05:20:36Z | - |
dc.date.available | 2019-08-05T05:20:36Z | - |
dc.date.created | 2019-08-05 | - |
dc.date.created | 2019-08-05 | - |
dc.date.created | 2019-08-05 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | Joule, v.3, no.7, pp.1782 - 1793 | - |
dc.identifier.issn | 2542-4351 | - |
dc.identifier.uri | http://hdl.handle.net/10203/263975 | - |
dc.description.abstract | Solar cells from III-V materials offer outstanding light conversion efficiency and power densities and have a proven reliability record. Nevertheless, the utilization of III-V devices has been hindered by high production costs that partially stem from expensive substrates for the growth of III-V materials. Here, we present an ultrathin epitaxially ready single-crystal Ge membrane, formed by germanium-on-nothing (GON) technology, which employs morphological evolution of an arrayed porous Ge during hydrogen annealing. This new process, inspired by a silicon-on-nothing (SON) process, significantly improves the reformed Ge surface compared with previous porous Ge studies such that low-defect-density heteroepitaxy of GaAs is achievable. We demonstrated the growth of a 14.44% efficient GaAs solar cell on GON with nearly identical open circuit voltage to a control cell grown on a bulk Ge and successfully transferred it onto an inexpensive handle by employing the plate-like void under the Ge film as a release layer. | - |
dc.language | English | - |
dc.publisher | CELL PRESS | - |
dc.title | Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000476463300018 | - |
dc.identifier.scopusid | 2-s2.0-85068693737 | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1782 | - |
dc.citation.endingpage | 1793 | - |
dc.citation.publicationname | Joule | - |
dc.identifier.doi | 10.1016/j.joule.2019.05.013 | - |
dc.contributor.localauthor | Oh, Jihun | - |
dc.contributor.nonIdAuthor | Park, Sanghyun | - |
dc.contributor.nonIdAuthor | Simon, John | - |
dc.contributor.nonIdAuthor | Schulte, Kevin L. | - |
dc.contributor.nonIdAuthor | Ptak, Aaron J. | - |
dc.contributor.nonIdAuthor | Wi, Jung-Sub | - |
dc.contributor.nonIdAuthor | Young, David L. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | HIGH-EFFICIENCY | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | INTERFACE | - |
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