DC Field | Value | Language |
---|---|---|
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Lee, Changhyeon | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.date.accessioned | 2019-06-12T07:50:24Z | - |
dc.date.available | 2019-06-12T07:50:24Z | - |
dc.date.created | 2019-06-12 | - |
dc.date.created | 2019-06-12 | - |
dc.date.created | 2019-06-12 | - |
dc.date.created | 2019-06-12 | - |
dc.date.created | 2019-06-12 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | ADVANCED ELECTRONIC MATERIALS, v.5, no.4, pp.1800799 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://hdl.handle.net/10203/262581 | - |
dc.description.abstract | Organic thin film transistor nonvolatile memories (OTFT-NVMs) with polymeric electret layers have attracted research attention for the application to emerging wearable electronics. However, it is challenging to develop low-power flexible OTFT-NVMs due to the lack of candidate polymers for flexible electret and blocking dielectric layer (BDL) equipped with the thickness downscalability and sufficiently strong insulating properties. Here, this study reports a low-power, flexible OTFT-NVM fabricated with a bilayer dielectric stack composed of a 3 nm thick polymer electret layer and a high-performance BDL prepared via an initiated chemical vapor deposition process. Especially, a crosslinked poly(1,4-butanediol diacrylate) film is newly synthesized as a BDL, which shows excellent insulating properties with high breakdown field (E-break > 8 MV cm(-1) with its thickness of 21.3 nm). Coupled with a 3 nm thick polymer electret layer (poly(1,3,5-trimethy1-1,3,5-trivinyl cyclotrisiloxane)), the fabricated NVMs exhibit a tunable memory window with dramatically reduced programming/erasing voltages less than 15 V and an extrapolated retention time as long as 108 s. Moreover, the device maintains their memory performance up to 1.6% of applied tensile strain. The OTFT-NVMs with the ultrathin dielectric stack can serve as a promising dielectric for stable data storage in various future wearable electronics. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Low-Power, Flexible Nonvolatile Organic Transistor Memory Based on an Ultrathin Bilayer Dielectric Stack | - |
dc.type | Article | - |
dc.identifier.wosid | 000468314900007 | - |
dc.identifier.scopusid | 2-s2.0-85062366251 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1800799 | - |
dc.citation.publicationname | ADVANCED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1002/aelm.201800799 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | blocking dielectric layers | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition | - |
dc.subject.keywordAuthor | organic thin-film transistor nonvolatile memory | - |
dc.subject.keywordAuthor | polymer electrets | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | EPIDERMAL ELECTRONICS | - |
dc.subject.keywordPlus | DEVICE PERFORMANCE | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | ELECTRETS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | ROUGHNESS | - |
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