Performance limitations of nanowire resonant-tunneling transistors with steep switching analyzed by Wigner transport simulation

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We conducted a quantum transport simulation of nanowire resonant-tunneling field-effect transistors (NW-RTFETs) based on the Wigner function model. The current-voltage characteristics of the NW-RTFETs were compared with those of the nanowire transistors and nanowire resonant-tunneling diodes. For the selection of a gate with appropriate performance, symmetric and asymmetric gates with various lengths were tested, and a symmetric gate, covering the quantum well and barrier regions, was chosen as a main gate. The source-side asymmetric gates did not produce a negative differential resistance at low gate voltages in contrast to the symmetric or drain-side asymmetric gates. Although steep switching is achieved in the negative differential resistance region, the ON/OFF current ratio (I-ON/I-OFF) is extremely low, compared to those of conventional transistors. In an attempt to increase the I-ON/I-OFF ratio, the sizes of the semiconductor cylinder and the oxide tube were changed. This study discusses the requirements for increasing the applicability of steep switching. Published under license by AIP Publishing.
Publisher
AMER INST PHYSICS
Issue Date
2019-05
Language
English
Article Type
Article
Citation

JOURNAL OF APPLIED PHYSICS, v.125, no.17

ISSN
0021-8979
DOI
10.1063/1.5085569
URI
http://hdl.handle.net/10203/262240
Appears in Collection
EE-Journal Papers(저널논문)
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