DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jaehyeon | ko |
dc.contributor.author | Hyun, Younghoon | ko |
dc.contributor.author | Park, Youngsam | ko |
dc.contributor.author | Choi, Wonchul | ko |
dc.contributor.author | Kim, Soojung | ko |
dc.contributor.author | Jeon, Hyojin | ko |
dc.contributor.author | Zyung, Taehyeong | ko |
dc.contributor.author | Jang, Moongyu | ko |
dc.date.accessioned | 2019-04-15T15:10:22Z | - |
dc.date.available | 2019-04-15T15:10:22Z | - |
dc.date.created | 2013-09-26 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6416 - 6419 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/254706 | - |
dc.description.abstract | A silicon nanowire one-dimensional thermoelectric device is presented as a solution to enhance thermoelectric performance. A top-down process is adopted for the definition of 50 nm silicon nanowires (SiNWs) and the fabrication of the nano-structured thermoelectric devices on silicon on insulator (SOI) wafer. To measure the Seebeck coefficients of 50 nm width n- and p-type SiNWs, a thermoelectric test structure, containing SiNWs, micro-heaters and temperature sensors is fabricated. Doping concentration is 1.0 x 10(20) cm(-3) for both for n- and p-type SiNWs. To determine the temperature gradient, a temperature coefficient of resistance (TCR) analysis is done and the extracted TCR value is 1750-1800 PPM . K-1. The measured Seebeck coefficients are -127.583 mu V . K-1 and 141.758 mu V . K-1 for n- and p-type SiNWs, respectively, at room temperature. Consequently, power factor values are 1.46 mW . m(-1) . K-2 and 1.66 mW . m(-1). K-2 for n- and p-type SiNWs, respectively. Our results indicate that SiNWs based thermoelectric devices have a great potential for applications in future energy conversion systems. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FIGURE | - |
dc.subject | MERIT | - |
dc.title | Seebeck Coefficient Characterization of Highly Doped n- and p-Type Silicon Nanowires for Thermoelectric Device Applications Fabricated with Top-Down Approach | - |
dc.type | Article | - |
dc.identifier.wosid | 000323628900092 | - |
dc.identifier.scopusid | 2-s2.0-84885441703 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 6416 | - |
dc.citation.endingpage | 6419 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2013.7612 | - |
dc.contributor.localauthor | Choi, Wonchul | - |
dc.contributor.nonIdAuthor | Kim, Jaehyeon | - |
dc.contributor.nonIdAuthor | Hyun, Younghoon | - |
dc.contributor.nonIdAuthor | Park, Youngsam | - |
dc.contributor.nonIdAuthor | Kim, Soojung | - |
dc.contributor.nonIdAuthor | Jeon, Hyojin | - |
dc.contributor.nonIdAuthor | Zyung, Taehyeong | - |
dc.contributor.nonIdAuthor | Jang, Moongyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Thermoelectric Device | - |
dc.subject.keywordAuthor | Seebeck Coefficient | - |
dc.subject.keywordAuthor | Silicon Nanowire | - |
dc.subject.keywordPlus | FIGURE | - |
dc.subject.keywordPlus | MERIT | - |
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