Method for increasing driving current of junctionless transistor

Abstract

Provided is a method for increasing a driving current of a junctionless transistor that includes: a substrate; a source region and a drain region which are formed on the substrate and are doped with the same type of dopant; a nanowire channel region which connects the source region and the drain source and is doped with the same type dopant as that of the source region and the drain region; a gate insulation layer which is formed to surround the nanowire channel region; and a gate electrode which is formed on the gate insulation layer and is formed to surround the nanowire channel region. An amount of current flowing through the nanowire channel region is increased by joule heat generated by applying a voltage to the source region and the drain region.