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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Low temperature nucleation of the perovskite phase in the deposition of Pb(Zr,Ti)O-3 films on the Pt/SiO2/Si substrate by electron cyclotron resonance plasma enhanced chemical vapor deposition

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dc.contributor.authorKim, Jae Whanko
dc.contributor.authorKim, Hyun Hoko
dc.contributor.authorWee, Dang-Moonko
dc.contributor.authorLee, Won-Jongko
dc.date.accessioned2011-09-19T05:43:29Z-
dc.date.available2011-09-19T05:43:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-07-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, no.7B, pp.936 - 938-
dc.identifier.urihttp://hdl.handle.net/10203/25234-
dc.description.abstractPZT films were deposited on the Pt/SiO2/Si at 450-480 degrees C by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) and the nucleation behavior of those films was investigated. Above 470 degrees C, pure perovskite phase PZT films were obtained. At the initial stage of the aim deposition, an interfacial pyrochlore phase was formed. However, it was transformed to the perovskite phase as the deposition process proceeded. Below 460 degrees C, a non-perovskite phase ii as formed and the composition was deviated from the stoichiometry. By introducing lead titanate seed layer, pure perovskite PZT films with stoichiometric composition could be fabricated even below 460 degrees C for the wide range of Zr/Ti concentration ratio.-
dc.description.sponsorshipThis research was supported by Korean Ministry of Education through Inter-University Semiconductor Research Center(ISRC 96-E-1051).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectTI)O3 THIN-FILMS-
dc.subjectBUFFER LAYER-
dc.subjectPB(ZR-
dc.subjectGROWTH-
dc.titleLow temperature nucleation of the perovskite phase in the deposition of Pb(Zr,Ti)O-3 films on the Pt/SiO2/Si substrate by electron cyclotron resonance plasma enhanced chemical vapor deposition-
dc.typeArticle-
dc.identifier.wosidA1997XM98300014-
dc.identifier.scopusid2-s2.0-0031191873-
dc.type.rimsART-
dc.citation.volume36-
dc.citation.issue7B-
dc.citation.beginningpage936-
dc.citation.endingpage938-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorWee, Dang-Moon-
dc.contributor.localauthorLee, Won-Jong-
dc.contributor.nonIdAuthorKim, Jae Whan-
dc.contributor.nonIdAuthorKim, Hyun Ho-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorECR-PECVD-
dc.subject.keywordAuthorPZT film-
dc.subject.keywordAuthorseed layer-
dc.subject.keywordAuthornucleation-
dc.subject.keywordAuthorperovskite phase-
dc.subject.keywordPlusTI)O3 THIN-FILMS-
dc.subject.keywordPlusBUFFER LAYER-
dc.subject.keywordPlusPB(ZR-
dc.subject.keywordPlusGROWTH-
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