DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HC | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2011-09-15 | - |
dc.date.available | 2011-09-15 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.11, pp.6566 - 6573 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25191 | - |
dc.description.abstract | Polycrystalline Pb(Zr,Ti)O-3 (PZT) films were fabricated at a low temperature of 450 degreesC by the electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) method. Stoichiometric PZT films with the pure perovskite phase could be obtained over a wider range of deposition conditions on Pt/RuO2 hybrid electrodes than on RuO2 electrodes. PZT capacitors fabricated on Pt/RuO2 hybrid electrodes showed low leakage current and superior polarization characteristics compared with those on RuO2 electrodes. PZT capacitors fabricated on Pt/RuO2 were not as fatigue-free as those on RuO2 but had higher resistance to fatigue than those on Pt. The introduction of a PbTiO3 buffer layer prior to PZT film deposition on Pt/RuO2 improved the fatigue characteristics by suppressing the formation of nonstoichiometric interfacial layers. Good leakage current property (J: 5.8 x 10(-7) A/cm(2) at 200 kV/cm) and fatigue characteristic (P* - P-boolean AND: 9% drop after 4 x 10(9) fatigue cycles) could be obtained for the 110-run-thick PZT film using Pt/RuO2 hybrid top and bottom electrodes. This electrode structure is thought to be promising for use as a capacitor of high-density ferroelectric random access memory (FRAM) devices. The fatigue model that can explain the fatigue characteristics of PECVD-PZT capacitors with various hybrid electrode configurations is also suggested. | - |
dc.description.sponsorship | The Consortium of Semiconductor Advanced Research (COSAR) as project No. 00-B6-C0-00-09-00-01. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | TITANATE THIN-FILMS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | PB(ZR | - |
dc.subject | CAPACITORS | - |
dc.subject | LAYER | - |
dc.subject | THICKNESS | - |
dc.subject | FATIGUE | - |
dc.title | Preparation and characterization of Pb(Zr,Ti)O-3 films deposited on Pt/RuO2 hybrid electrode for ferroelectric random access memory devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000172454500076 | - |
dc.identifier.scopusid | 2-s2.0-0036153168 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 6566 | - |
dc.citation.endingpage | 6573 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Lee, HC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | PZT | - |
dc.subject.keywordAuthor | CVD | - |
dc.subject.keywordAuthor | FRAM | - |
dc.subject.keywordAuthor | hybrid electrode | - |
dc.subject.keywordAuthor | fatigue | - |
dc.subject.keywordAuthor | leakage current | - |
dc.subject.keywordAuthor | buffer layer | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | TITANATE THIN-FILMS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | PB(ZR | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | FATIGUE | - |
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