DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, HJ | ko |
dc.contributor.author | Kim, JH | ko |
dc.contributor.author | Moon, WS | ko |
dc.contributor.author | Park, SeungBin | ko |
dc.contributor.author | Hwang, SC | ko |
dc.contributor.author | Lee, MY | ko |
dc.contributor.author | Woo, Seong-Ihl | ko |
dc.date.accessioned | 2019-03-07T23:17:10Z | - |
dc.date.available | 2019-03-07T23:17:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.12, no.2-4, pp.185 - 197 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250991 | - |
dc.description.abstract | A novel type of down-flow LSMCVD (Liquid Source Mist CVD) reactor was developed to prepare a high dielectric BST thin film on Pt electrode on Si wafer. Barium acetate [Ba(00CCH(3))(2)], strontium acetate [Sr(00CCH(3))(2)], and titanium isoproxide [Ti(OC3H7i)(4)] were used as metal sources. Metal sources were dissolved in acetic acid, 1-butanol, or 2-methoxyethanol. BST [Ba/(Ba + Sr) = 0.7] film annealed on Pr/Ti/SiO2/Si above 650 degrees C was polycrystalline. BST film has a (110) preferred orientation with increasing temperature. Surface roughness of BST film and grain size increased with increasing temperature. The metal-oxygen bond was formed at 650 degrees C as shown in the spectra of FTIR. The depth profiles of elements of BST thin films indicated a uniform composition throughout the film, BST films annealed at 750 degrees C showed a dielectric constant and a tans of 390(thickness: 150 nm) and 0.06 at a frequency of 100 kHz, respectively. The behavior of capacitance of the BST film with bias voltage showed paraelectric property. BST film annealed at 750 degrees C had the leakage current density of 3.2(mu A/cm(2)) at a bias voltage of 2V. | - |
dc.language | English | - |
dc.publisher | GORDON BREACH SCI PUBL LTD | - |
dc.subject | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject | DIELECTRIC-PROPERTIES | - |
dc.subject | LASER ABLATION | - |
dc.title | Preparation of BST thin films on Pt electrode on Si wafer with down-flow LSMCVD reactor | - |
dc.type | Article | - |
dc.identifier.wosid | A1996WV41700014 | - |
dc.identifier.scopusid | 2-s2.0-0030313350 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 2-4 | - |
dc.citation.beginningpage | 185 | - |
dc.citation.endingpage | 197 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.contributor.localauthor | Park, SeungBin | - |
dc.contributor.localauthor | Woo, Seong-Ihl | - |
dc.contributor.nonIdAuthor | Chung, HJ | - |
dc.contributor.nonIdAuthor | Kim, JH | - |
dc.contributor.nonIdAuthor | Moon, WS | - |
dc.contributor.nonIdAuthor | Hwang, SC | - |
dc.contributor.nonIdAuthor | Lee, MY | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | BST | - |
dc.subject.keywordAuthor | ferroelectrics | - |
dc.subject.keywordAuthor | LSMCVD | - |
dc.subject.keywordAuthor | DRAM capacitor | - |
dc.subject.keywordPlus | CHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | LASER ABLATION | - |
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