Improvements in electrical properties of (Ba,Sr)TiO3 capacitor with chemical vapor deposited Pt top electrode using Pt hexafluoroacetylacetonate

Abstract

Electrical properties of (Bs,Sr)TiO3 (BST) thin films are characterized with sputtered and metal organic chemical vapor deposited (MOCVD) Pt top electrodes. BST films with MOCVD Pt top electrodes, which were deposited using Pt(CF3COCHCOCF3)(2) (Pt-HFA) as a precursor, showed less leakage current without bulged curves and a higher dielectric constant than those with sputtered Pt top electrodes. The improvement of electrical properties seems to result from the reduction of interface trap sites with the incorporation of fluorine atoms from HFA ligands. (C) 1999 American Institute of Physics. [S0003-6951(99)00623-3].