EFFECT OF CO AND CO2 ADDITION TO THE CF4/O-2 GAS SYSTEM ON THE ETCHING OF A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM
- Publisher
- AMER INST PHYSICS
- Issue Date
- 1995-05
- Language
- English
- Article Type
- Article
- Keywords
PLASMA; DISCHARGES; SILICON; OXYGEN; SF6
- Citation
JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.13, no.3, pp.914 - 917
- ISSN
- 1071-1023
- Appears in Collection
- CBE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 9 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.