DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SangHyeon | ko |
dc.contributor.author | Yokoyama, Masafumi | ko |
dc.contributor.author | Taoka, Noriyuki | ko |
dc.contributor.author | Iida, Ryo | ko |
dc.contributor.author | Lee, Sunghoon | ko |
dc.contributor.author | Nakane, Ryosho | ko |
dc.contributor.author | Urabe, Yuji | ko |
dc.contributor.author | Miyata, Noriyuki | ko |
dc.contributor.author | Yasuda, Tetsuji | ko |
dc.contributor.author | Yamada, Hisashi | ko |
dc.contributor.author | Fukuhara, Noboru | ko |
dc.contributor.author | Hata, Masahiko | ko |
dc.contributor.author | Takenaka, Mitsuru | ko |
dc.contributor.author | Takagi, Shinichi | ko |
dc.date.accessioned | 2019-02-20T04:58:49Z | - |
dc.date.available | 2019-02-20T04:58:49Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.citation | APPLIED PHYSICS EXPRESS, v.5, no.1 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250302 | - |
dc.description.abstract | The electron mobility enhancement of extremely thin body In0.7Ga0.3As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si substrates by using In0.3Ga0.7As MOS interface buffer layers was demonstrated. The MOSFETs with the InGaAs thickness of 2/5/3 nm have exhibited the electron mobility of 2810 cm(2) V-1 s(-1) with an enhancement factor of 4.2 against that of Si MOSFET. We have examined the body thickness (T-body) dependence of the electron mobility. It was found that a channel thickness fluctuation scattering mechanism strongly affects the mobility in T-body of around 10 nm and thinner. The formation of a uniform and flat InGaAs-OI wafer is required for further improvements. (C) 2012 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers | - |
dc.type | Article | - |
dc.identifier.wosid | 000299312400024 | - |
dc.identifier.scopusid | 2-s2.0-84861211821 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | APPLIED PHYSICS EXPRESS | - |
dc.identifier.doi | 10.1143/APEX.5.014201 | - |
dc.contributor.nonIdAuthor | Yokoyama, Masafumi | - |
dc.contributor.nonIdAuthor | Taoka, Noriyuki | - |
dc.contributor.nonIdAuthor | Iida, Ryo | - |
dc.contributor.nonIdAuthor | Lee, Sunghoon | - |
dc.contributor.nonIdAuthor | Nakane, Ryosho | - |
dc.contributor.nonIdAuthor | Urabe, Yuji | - |
dc.contributor.nonIdAuthor | Miyata, Noriyuki | - |
dc.contributor.nonIdAuthor | Yasuda, Tetsuji | - |
dc.contributor.nonIdAuthor | Yamada, Hisashi | - |
dc.contributor.nonIdAuthor | Fukuhara, Noboru | - |
dc.contributor.nonIdAuthor | Hata, Masahiko | - |
dc.contributor.nonIdAuthor | Takenaka, Mitsuru | - |
dc.contributor.nonIdAuthor | Takagi, Shinichi | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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