DC Field | Value | Language |
---|---|---|
dc.contributor.author | Suzuki, R. | ko |
dc.contributor.author | Taoka, N. | ko |
dc.contributor.author | Yokoyama, M. | ko |
dc.contributor.author | Lee, S. | ko |
dc.contributor.author | Kim, S. H. | ko |
dc.contributor.author | Hoshii, T. | ko |
dc.contributor.author | Yasuda, T. | ko |
dc.contributor.author | Jevasuwan, W. | ko |
dc.contributor.author | Maeda, T. | ko |
dc.contributor.author | Ichikawa, O. | ko |
dc.contributor.author | Fukuhara, N. | ko |
dc.contributor.author | Hata, M. | ko |
dc.contributor.author | Takenaka, M. | ko |
dc.contributor.author | Takagi, S. | ko |
dc.date.accessioned | 2019-02-20T04:58:48Z | - |
dc.date.available | 2019-02-20T04:58:48Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.100, no.13 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250301 | - |
dc.description.abstract | We have studied the impact of the Al2O3 inter-layer on interface properties of HfO2/InGaAs metal-oxide-semiconductor (MOS) interfaces. We have found that the insertion of the ultrathin Al2O3 inter-layer (2 cycle: 0.2 nm) can effectively improve the HfO2/InGaAs interface properties. The frequency dispersion and the stretch-out of C-V characteristics are improved, and the interface trap density (D-it) value is significantly decreased by the 2 cycle Al2O3 inter-layer. Finally, we have demonstrated the 1-nm-thick capacitance equivalent thickness in the HfO2/Al2O3/InGaAs MOS capacitors with good interface properties and low gate leakage of 2.4 x 10(-2) A/cm(2). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698095] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density | - |
dc.type | Article | - |
dc.identifier.wosid | 000302230800054 | - |
dc.identifier.scopusid | 2-s2.0-84859542288 | - |
dc.type.rims | ART | - |
dc.citation.volume | 100 | - |
dc.citation.issue | 13 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3698095 | - |
dc.contributor.nonIdAuthor | Suzuki, R. | - |
dc.contributor.nonIdAuthor | Taoka, N. | - |
dc.contributor.nonIdAuthor | Yokoyama, M. | - |
dc.contributor.nonIdAuthor | Lee, S. | - |
dc.contributor.nonIdAuthor | Hoshii, T. | - |
dc.contributor.nonIdAuthor | Yasuda, T. | - |
dc.contributor.nonIdAuthor | Jevasuwan, W. | - |
dc.contributor.nonIdAuthor | Maeda, T. | - |
dc.contributor.nonIdAuthor | Ichikawa, O. | - |
dc.contributor.nonIdAuthor | Fukuhara, N. | - |
dc.contributor.nonIdAuthor | Hata, M. | - |
dc.contributor.nonIdAuthor | Takenaka, M. | - |
dc.contributor.nonIdAuthor | Takagi, S. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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