Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

Cited 4 time in webofscience Cited 4 time in scopus
  • Hit : 133
  • Download : 0
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electrodes have been evaluated in order to study the impact of metal gate electrodes on gate dielectrics and interface properties. It is found that MOS capacitors with Pd gate electrode can provide thinnest capacitance-equivalent-thickness (CET) and better HfO2/InGaAs MOS interfaces than those with Al and Au. However, the Al2O3/InGaAs interface properties are better in Au and Al gate electrodes than in Pd. Thus, the combination of high-k and gate metals must be carefully examined for realizing optimum gate stacks. (C) 2013 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2013-09
Language
English
Article Type
Article
Citation

MICROELECTRONIC ENGINEERING, v.109, pp.28 - 30

ISSN
0167-9317
DOI
10.1016/j.mee.2013.03.086
URI
http://hdl.handle.net/10203/250297
Appears in Collection
RIMS Journal Papers
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 4 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0