DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yokoyama, Masafumi | ko |
dc.contributor.author | Iida, Ryo | ko |
dc.contributor.author | Ikku, Yuki | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.contributor.author | Takagi, Hideki | ko |
dc.contributor.author | Yasuda, Tetsuji | ko |
dc.contributor.author | Yamada, Hisashi | ko |
dc.contributor.author | Ichikawa, Osamu | ko |
dc.contributor.author | Fukuhara, Noboru | ko |
dc.contributor.author | Hata, Masahiko | ko |
dc.contributor.author | Takenaka, Mitsuru | ko |
dc.contributor.author | Takagi, Shinichi | ko |
dc.date.accessioned | 2019-02-20T04:58:40Z | - |
dc.date.available | 2019-02-20T04:58:40Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250296 | - |
dc.description.abstract | We have studied the formation of III-V-compound-semiconductors-on-insulator (III-V-OI) structures with thin buried oxide (BOX) layers on Si wafers by using developed direct wafer bonding (DWB). In order to realize III-V-OI MOSFETs with ultrathin body and extremely thin body (ETB) InGaAs-OI channel layers and ultrathin BOX layers, we have developed an electron-cyclotron resonance (ECR) O-2 plasma-assisted DWB process with ECR sputtered SiO2 BOX layers and a DWB process based on atomic-layer-deposition Al2O3 (ALD-Al2O3) BOX layers. It is essential to suppress micro-void generation during wafer bonding process to achieve excellent wafer bonding. We have found that major causes of micro-void generation in DWB processes with ECR-SiO2 and ALD-Al2O3 BOX layers are desorption of Ar and H2O gas, respectively. In order to suppress micro-void generation in the ECR-SiO2 BOX layers, it is effective to introduce the outgas process before bonding wafers. On the other hand, it is a possible solution for suppressing micro-void generation in the ALD-Al2O3 BOX layers to increase the deposition temperature of the ALD-Al2O3 BOX layers. It is also another possible solution to deposit ALD-Al2O3 BOX layers on thermally oxidized SiO2 layers, which can absorb the desorption gas from ALD-Al2O3 BOX layers. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Formation of III-V-on-insulator structures on Si by direct wafer bonding | - |
dc.type | Article | - |
dc.identifier.wosid | 000323418400010 | - |
dc.identifier.scopusid | 2-s2.0-84883158183 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 9 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0268-1242/28/9/094009 | - |
dc.contributor.nonIdAuthor | Yokoyama, Masafumi | - |
dc.contributor.nonIdAuthor | Iida, Ryo | - |
dc.contributor.nonIdAuthor | Ikku, Yuki | - |
dc.contributor.nonIdAuthor | Takagi, Hideki | - |
dc.contributor.nonIdAuthor | Yasuda, Tetsuji | - |
dc.contributor.nonIdAuthor | Yamada, Hisashi | - |
dc.contributor.nonIdAuthor | Ichikawa, Osamu | - |
dc.contributor.nonIdAuthor | Fukuhara, Noboru | - |
dc.contributor.nonIdAuthor | Hata, Masahiko | - |
dc.contributor.nonIdAuthor | Takenaka, Mitsuru | - |
dc.contributor.nonIdAuthor | Takagi, Shinichi | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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