Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Abstract

In this paper, we fabricated asymmetrically tensile-strained In0.53Ga0.47As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a lateral strain relaxation technique. A stripe-like line structure, fabricated in biaxially strained In0.53Ga0.47As-OI can lead to the lateral strain relaxation and asymmetric strain configuration in In0.53Ga0.47As-OI with the channel width of 100 nm. We have found that the effective mobility (mu(eff)) enhancement in In0.53Ga0.47As-OI MOSFETs with uniaxial-like asymmetric strain becomes smaller than that in In0.53Ga0.47As-OI MOSFETs with biaxial strain. We have clarified from a systematic analysis between the strain values and the mu(eff) characteristics that this mobility behavior can be understood by the change of the energy level of the conduction band minimum due to the lateral strain relaxation. (C) 2014 AIP Publishing LLC.