DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Minsoo | ko |
dc.contributor.author | Kim, Younghyun | ko |
dc.contributor.author | Yokoyama, Masafumi | ko |
dc.contributor.author | Nakane, Ryosho | ko |
dc.contributor.author | Kim, SangHyeon | ko |
dc.contributor.author | Takenaka, Mitsuru | ko |
dc.contributor.author | Takagi, Shinichi | ko |
dc.date.accessioned | 2019-02-20T04:58:27Z | - |
dc.date.available | 2019-02-20T04:58:27Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.citation | THIN SOLID FILMS, v.557, pp.298 - 301 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250287 | - |
dc.description.abstract | We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al2O3-based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal-oxide-semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I-ON/I-OFF ratio of 10(3)-10(4) were obtained. It is expected that these device characteristics can be improved by further process optimization. (c) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000333968300061 | - |
dc.identifier.scopusid | 2-s2.0-84897915962 | - |
dc.type.rims | ART | - |
dc.citation.volume | 557 | - |
dc.citation.beginningpage | 298 | - |
dc.citation.endingpage | 301 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/j.tsf.2013.10.067 | - |
dc.contributor.nonIdAuthor | Kim, Minsoo | - |
dc.contributor.nonIdAuthor | Kim, Younghyun | - |
dc.contributor.nonIdAuthor | Yokoyama, Masafumi | - |
dc.contributor.nonIdAuthor | Nakane, Ryosho | - |
dc.contributor.nonIdAuthor | Takenaka, Mitsuru | - |
dc.contributor.nonIdAuthor | Takagi, Shinichi | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
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