DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SangHyeon | ko |
dc.contributor.author | Yokoyama, Masafumi | ko |
dc.contributor.author | Nakane, Ryosho | ko |
dc.contributor.author | Ichikawa, Osamu | ko |
dc.contributor.author | Osada, Takenori | ko |
dc.contributor.author | Hata, Masahiko | ko |
dc.contributor.author | Takenaka, Mitsuru | ko |
dc.contributor.author | Takagi, Shinichi | ko |
dc.date.accessioned | 2019-02-20T04:58:24Z | - |
dc.date.available | 2019-02-20T04:58:24Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2014-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.104, no.26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250285 | - |
dc.description.abstract | We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T-body) scaling provides better short channel effect (SCE) control, whereas the T-body scaling also causes the reduction of the mobility limited by channel thickness fluctuation (delta T-body) scattering (mu(fluctuation)). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T-channel) scaling is more favorable than the thickness of MOS interface buffer layer (T-buffer) scaling from a viewpoint of a balance between SCEs control and mu(fluctuation) reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design. (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000339114100066 | - |
dc.identifier.scopusid | 2-s2.0-84905663729 | - |
dc.type.rims | ART | - |
dc.citation.volume | 104 | - |
dc.citation.issue | 26 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4885765 | - |
dc.contributor.nonIdAuthor | Yokoyama, Masafumi | - |
dc.contributor.nonIdAuthor | Nakane, Ryosho | - |
dc.contributor.nonIdAuthor | Ichikawa, Osamu | - |
dc.contributor.nonIdAuthor | Osada, Takenori | - |
dc.contributor.nonIdAuthor | Hata, Masahiko | - |
dc.contributor.nonIdAuthor | Takenaka, Mitsuru | - |
dc.contributor.nonIdAuthor | Takagi, Shinichi | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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