DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shim, Jae-Phil | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Kim, Hansung | ko |
dc.contributor.author | Ju, Gunwu | ko |
dc.contributor.author | Lim, Heejeong | ko |
dc.contributor.author | Kim, SangHyeon | ko |
dc.contributor.author | Kim, Hyung-jun | ko |
dc.date.accessioned | 2019-02-20T04:57:39Z | - |
dc.date.available | 2019-02-20T04:57:39Z | - |
dc.date.created | 2019-02-07 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | APL MATERIALS, v.6, no.1 | - |
dc.identifier.issn | 2166-532X | - |
dc.identifier.uri | http://hdl.handle.net/10203/250255 | - |
dc.description.abstract | We demonstrated ultra-thin-body (UTB) junctionless (JL) p-type field-effect transistors (pFETs) on Si using GaAs channels. Wafer bonding and epitaxial lift-off techniques were employed to fabricate the UTB p-GaAs-on-insulator on a Si template. Subsequently, we evaluated the JL FETs having different p-GaAs channel thicknesses considering both maximum depletion width and doping concentration for high performance. Furthermore, by introducing a double-gate operation, we more effectively controlled threshold voltage and attained an even higher I-ON/I-OFF of > 10(6), as well as a low subthreshold swing value of 300 mV/dec. (c) 2018 Author(s). | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si | - |
dc.type | Article | - |
dc.identifier.wosid | 000423723700004 | - |
dc.identifier.scopusid | 2-s2.0-85040567705 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | APL MATERIALS | - |
dc.identifier.doi | 10.1063/1.5000532 | - |
dc.contributor.nonIdAuthor | Shim, Jae-Phil | - |
dc.contributor.nonIdAuthor | Kim, Seong Kwang | - |
dc.contributor.nonIdAuthor | Kim, Hansung | - |
dc.contributor.nonIdAuthor | Ju, Gunwu | - |
dc.contributor.nonIdAuthor | Lim, Heejeong | - |
dc.contributor.nonIdAuthor | Kim, Hyung-jun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.