Experiments and 2D-Simulations for Quasisaturation Effect in Power VDMOS Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Kwyro | - |
| dc.contributor.author | Park, C.K. | - |
| dc.date.accessioned | 2011-08-11 | - |
| dc.date.available | 2011-08-11 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | Proc. of 2nd Int. Sym. on Power Semicondcutor Devices and ICs, v., no., pp.219 - 224 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/24846 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.title | Experiments and 2D-Simulations for Quasisaturation Effect in Power VDMOS Transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 219 | - |
| dc.citation.endingpage | 224 | - |
| dc.citation.publicationname | Proc. of 2nd Int. Sym. on Power Semicondcutor Devices and ICs | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | Park, C.K. | - |
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