DSpace at KOASAS
College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

Cited 121 time in webofscience Cited 0 time in scopus
  • Hit : 850
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorSeo, Myungsooko
dc.contributor.authorKang, Min Hoko
dc.contributor.authorJeon, Seung-Baeko
dc.contributor.authorBae, Hagyoulko
dc.contributor.authorHur, Jaeko
dc.contributor.authorJang, Byung Chulko
dc.contributor.authorYun, Seokjungko
dc.contributor.authorCho, Seongwooko
dc.contributor.authorKim, Wu-kangko
dc.contributor.authorKim, Myung-Suko
dc.contributor.authorHwang, Kyu-Manko
dc.contributor.authorHONG, DANIEL SEUNGBUMko
dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2018-09-18T06:36:37Z-
dc.date.available2018-09-18T06:36:37Z-
dc.date.created2018-07-05-
dc.date.created2018-07-05-
dc.date.created2018-07-05-
dc.date.created2018-07-05-
dc.date.issued2018-09-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/245657-
dc.description.abstractA highly scalable synapse device based on a junctionless (JL) ferroelectric (FE) FinFET is presented for neuromorphic applications. The synaptic behaviors of the JL metal-ferroelectric-insulator-silicon FinFET were experimentally demonstrated after verifying the ferroelectric characteristics of the HfZrOx (HZO) film using a metal-ferroelectric-metal capacitor. The fabricated synapse showed distinguishable polarization switching behaviors with gradually controllable channel conductance. From neural network simulations using the proposed JL FE FinFET as synapses, the pattern recognition accuracy for hand-written digits was validated to be approximately 80% for neuromorphic applications.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleFirst Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications-
dc.typeArticle-
dc.identifier.wosid000443054700044-
dc.identifier.scopusid2-s2.0-85049470094-
dc.type.rimsART-
dc.citation.volume39-
dc.citation.issue9-
dc.citation.beginningpage1445-
dc.citation.endingpage1448-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2018.2852698-
dc.contributor.localauthorHONG, DANIEL SEUNGBUM-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKang, Min Ho-
dc.contributor.nonIdAuthorYun, Seokjung-
dc.contributor.nonIdAuthorKim, Wu-kang-
dc.contributor.nonIdAuthorKim, Myung-Su-
dc.contributor.nonIdAuthorHwang, Kyu-Man-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorJunctionless FET-
dc.subject.keywordAuthorferroelectric FET-
dc.subject.keywordAuthorFinFET-
dc.subject.keywordAuthorsynapse-
dc.subject.keywordAuthorneuromorphic computing system-
dc.subject.keywordPlusSYSTEMS-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusTRANSISTORS-
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 121 items in WoS Click to see citing articles in records_button

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0