DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, David | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Seo, Sunae | ko |
dc.contributor.author | Song, Ihun | ko |
dc.contributor.author | Kim, Changjung | ko |
dc.contributor.author | Park, Sungho | ko |
dc.contributor.author | Harris, James S. | ko |
dc.contributor.author | Chung, U. -In | ko |
dc.date.accessioned | 2018-03-21T02:56:49Z | - |
dc.date.available | 2018-03-21T02:56:49Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2010-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.97, no.17 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240836 | - |
dc.description.abstract | Demonstration of a transparent InGaZnO thin film transistor using a graphene composite as the transparent source/drain electrode is presented. Graphene growth was confirmed by Raman spectroscopy, showing all associated peaks at 1350, 1580, and 2700 cm(-1). The graphene composite showed a sheet resistance reduction of 15% while losing only 1.2% transparency when compared to the reference indium-tin oxide only electrode. Device characteristics of the composite device were on similar levels to those of the reference indium-tin oxide only device reaching a peak saturation mobility of nearly 30 cm(2) v(-1) s(-1) indicating that graphene integration did not degrade InGaZnO transistor performance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490245] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | GRAPHENE | - |
dc.title | Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000284233600027 | - |
dc.identifier.scopusid | 2-s2.0-78149459478 | - |
dc.type.rims | ART | - |
dc.citation.volume | 97 | - |
dc.citation.issue | 17 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3490245 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Seo, David | - |
dc.contributor.nonIdAuthor | Seo, Sunae | - |
dc.contributor.nonIdAuthor | Song, Ihun | - |
dc.contributor.nonIdAuthor | Kim, Changjung | - |
dc.contributor.nonIdAuthor | Park, Sungho | - |
dc.contributor.nonIdAuthor | Harris, James S. | - |
dc.contributor.nonIdAuthor | Chung, U. -In | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GRAPHENE | - |
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