DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Seungjae | ko |
dc.contributor.author | Kong, Jaemin | ko |
dc.contributor.author | Song, Sunghoon | ko |
dc.contributor.author | Lee, Kwanghee | ko |
dc.contributor.author | Lee, Takhee | ko |
dc.contributor.author | Hwang, Hyunsang | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:56:40Z | - |
dc.date.available | 2018-03-21T02:56:40Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1143 - 1147 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240830 | - |
dc.description.abstract | Solution-processed TiOx layer was investigated as a candidate for next-generation resistive random access memory (ReRAM) application. TiOx active layer was prepared by simple spin coating process of a titanium(IV) isopropoxide precursor using sol-gel chemistry. Through the introduction of indium-tin-oxide (ITO) coated glass and polyethersulfone (PES) substrates. tranparent and flexible ReRAM devices were demonstrated, respectively. In addition, using scalable via-hole structure with nano-scale active area, the feasibility for high-density memory application was investigated. All ReRAM devices formed using various substrates exhibited good memory performance, such as stable dc I-V, ac endurance, and retention characteristics during maintaining their own unique functions accomplished by substrate properties. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TITANIUM-OXIDE | - |
dc.subject | FILMS | - |
dc.title | Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility | - |
dc.type | Article | - |
dc.identifier.wosid | 000292572700026 | - |
dc.identifier.scopusid | 2-s2.0-79958059258 | - |
dc.type.rims | ART | - |
dc.citation.volume | 88 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1143 | - |
dc.citation.endingpage | 1147 | - |
dc.citation.publicationname | MICROELECTRONIC ENGINEERING | - |
dc.identifier.doi | 10.1016/j.mee.2011.03.054 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Jung, Seungjae | - |
dc.contributor.nonIdAuthor | Kong, Jaemin | - |
dc.contributor.nonIdAuthor | Song, Sunghoon | - |
dc.contributor.nonIdAuthor | Lee, Kwanghee | - |
dc.contributor.nonIdAuthor | Lee, Takhee | - |
dc.contributor.nonIdAuthor | Hwang, Hyunsang | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.subject.keywordAuthor | Titanium oxide | - |
dc.subject.keywordAuthor | Solution-process | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | Transparent | - |
dc.subject.keywordAuthor | Flexible | - |
dc.subject.keywordAuthor | Nano-scale | - |
dc.subject.keywordAuthor | Via-hole | - |
dc.subject.keywordPlus | TITANIUM-OXIDE | - |
dc.subject.keywordPlus | FILMS | - |
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