DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Ji-Hyun | ko |
dc.contributor.author | Lee, Dongsoo | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:53:18Z | - |
dc.date.available | 2018-03-21T02:53:18Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.107, no.20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240772 | - |
dc.description.abstract | A model that describes bilayered bipolar resistive random access memory (BL-ReRAM) switching in oxide with a large band gap is presented. It is shown that, owing to the large energy barrier between the electrode and thin oxide layer, the electronic conduction is dominated by trap-assisted tunneling. The model is composed of an atomic oxygen vacancy migration model and an electronic tunneling conduction model. We also show experimentally observed three-resistance-level switching in Ru/ZrO2/TaOx BL-ReRAM that can be explained by the two types of traps, i. e., shallow and deep traps in ZrO2. (c) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides | - |
dc.type | Article | - |
dc.identifier.wosid | 000365688700064 | - |
dc.identifier.scopusid | 2-s2.0-84947967079 | - |
dc.type.rims | ART | - |
dc.citation.volume | 107 | - |
dc.citation.issue | 20 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4935980 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Hur, Ji-Hyun | - |
dc.contributor.nonIdAuthor | Lee, Dongsoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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