DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Ji-Hyun | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:53:13Z | - |
dc.date.available | 2018-03-21T02:53:13Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2015-12 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.26, no.49 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240769 | - |
dc.description.abstract | We present a theoretical model which describes hole mobility degradation by charged dislocations in p-type Si1-xGex. The complete analytical expression of the dislocation mobility is calculated from the momentum relaxation time of hole carriers under weak electric field. The obtained dislocation mobility shows a T-3/2/lambda relation and is proportional to the germanium density x. We also suggest a criterion for negating scatterings by dislocations in terms of the controllable parameters such as acceptor dopant density, dislocation density, temperature, and Ge density x, etc. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | GERMANIUM | - |
dc.subject | MOBILITY | - |
dc.subject | GE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | GAN | - |
dc.title | Dislocation scatterings in p-type Si1-xGex under weak electric field | - |
dc.type | Article | - |
dc.identifier.wosid | 000366715200007 | - |
dc.identifier.scopusid | 2-s2.0-84947976707 | - |
dc.type.rims | ART | - |
dc.citation.volume | 26 | - |
dc.citation.issue | 49 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/26/49/495201 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Hur, Ji-Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | silicon germanium | - |
dc.subject.keywordAuthor | dislocation | - |
dc.subject.keywordAuthor | epitaxy | - |
dc.subject.keywordAuthor | scattering | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | GAN | - |
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