DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jone Soo | ko |
dc.contributor.author | Moon, Sun Hong | ko |
dc.contributor.author | Yang, Yong-Ho | ko |
dc.contributor.author | Kang, Seung-Mo | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2018-02-21T05:11:40Z | - |
dc.date.available | 2018-02-21T05:11:40Z | - |
dc.date.created | 2018-01-15 | - |
dc.date.created | 2018-01-15 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | Korean Journal of Materials Research, v.24, no.9, pp.443 - 450 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | http://hdl.handle.net/10203/239974 | - |
dc.description.abstract | Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicideenhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a NiCl2 environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at 200 °C. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at 730 °C for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of NiSi2 precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to 1 × 1018 cm-3. The maximum fieldeffect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were 85 cm2/V·s and 1.23 V/decade at Vds = -3 V, respectively. The off current was little increased under reverse bias from 1.0 × 10-11 A. Our results showed that the SERTA process is a promising technology for high quality poly- Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments. | - |
dc.language | Korean | - |
dc.publisher | Korea Federation of Science and Technology | - |
dc.title | Fabrication of Polycrystalline Si Films by Silicide-Enhanced Rapid Thermal Annealing and Their Application to Thin Film Transistors | - |
dc.title.alternative | Silicide-Enhanced Rapid Thermal Annealing을 이용한 다결정 Si 박막의 제조 및 다결정 Si 박막 트랜지스터에의 응용 | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-84908615131 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 443 | - |
dc.citation.endingpage | 450 | - |
dc.citation.publicationname | Korean Journal of Materials Research | - |
dc.identifier.kciid | ART001911849 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Kim, Jone Soo | - |
dc.description.isOpenAccess | N | - |
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