Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties

Abstract

A simple and controlled growth of metallic NiSi nanowires at low temperatures (< 400 degrees C) by a chemical vapor deposition using SiH4 at a low supersaturation limit is reported. It is demonstrated that the simple and low temperature synthesis of metallic nanowires is compatible with conventional Si processing and provide interesting strategies for their possible applications as interconnects in Si microelectronics and as field emitters in field emission displays.