Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator

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dc.contributor.authorKim, Yujinko
dc.contributor.authorLee, Kwang Heumko
dc.contributor.authorMun, Geumbiko
dc.contributor.authorPark, Kyeongwooko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2018-01-30T04:17:35Z-
dc.date.available2018-01-30T04:17:35Z-
dc.date.created2018-01-08-
dc.date.created2018-01-08-
dc.date.created2018-01-08-
dc.date.issued2017-12-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.12-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/10203/238786-
dc.description.abstractGate insulator (GI) materials in top gate structured InGaZnO thin-film transistor (TFT) with copper gate electrode are examined for the application to the large area display. To overcome the problems with hydrogen diffusion, which can influence the number of carriers in oxide semiconductor and to gain large trans-conductance coefficient, a double-layered GI of 30nm Al2O3/120nm SiN(x)is adopted. The TFT showed field-effect mobility, V-on, SS, and hysteresis of 12.8cm(2)V(-1)s(-1), -0.7V, 0.17V decade(-1), and almost 0V, respectively, and the Von under the positive bias stress of 20V and negative bias stress of -20V at 60C for 10000s are +0.1 and -0.4V, respectively.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectCOPPER DIFFUSION-
dc.subjectAMOLED DISPLAYS-
dc.subjectHIGH-MOBILITY-
dc.subjectOXIDE TFT-
dc.subjectSOURCE/DRAIN-
dc.subjectPASSIVATION-
dc.subjectSILICON-
dc.subjectVOLTAGE-
dc.subjectSTRESS-
dc.titleOutstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator-
dc.typeArticle-
dc.identifier.wosid000417586300003-
dc.identifier.scopusid2-s2.0-85037537210-
dc.type.rimsART-
dc.citation.volume214-
dc.citation.issue12-
dc.citation.publicationnamePHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.identifier.doi10.1002/pssa.201700191-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorKim, Yujin-
dc.contributor.nonIdAuthorMun, Geumbi-
dc.contributor.nonIdAuthorPark, Kyeongwoo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorAl2O3-
dc.subject.keywordAuthorSiNx GI-
dc.subject.keywordAuthorconductance coefficient-
dc.subject.keywordAuthorgate insulators-
dc.subject.keywordAuthorIGZO-
dc.subject.keywordAuthorTFT-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusCOPPER DIFFUSION-
dc.subject.keywordPlusAMOLED DISPLAYS-
dc.subject.keywordPlusHIGH-MOBILITY-
dc.subject.keywordPlusOXIDE TFT-
dc.subject.keywordPlusSOURCE/DRAIN-
dc.subject.keywordPlusPASSIVATION-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordPlusSTRESS-
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