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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

Microcrystalline silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using helium gas

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dc.contributor.authorLee, KEko
dc.contributor.authorLee, WHko
dc.contributor.authorShin, Sung-Chulko
dc.contributor.authorLee, CCko
dc.date.accessioned2011-05-24T08:17:37Z-
dc.date.available2011-05-24T08:17:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-10-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.35, no.10A, pp.1241 - 1244-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/23873-
dc.description.abstractWe have investigated the growth of microcrystalline silicon films by electron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD) using He as the ECR gas at substrate temperatures in the range of 180 to 550 degrees C with He to silane ratios (He/SiH4) of 1: 4, and 9. With ratios of 4 and 9, the volume fractions of microcrystalline silicon increase with temperature and exceed 90% at 550 degrees C. To study the role of He plasma; we prepared silicon films using a layer-by-layer technique and found that long exposure to He plasma changes the structure of amorphous silicon to microcrystalline.-
dc.description.sponsorshipThis work was partially supported by the Korea Science and Engineering Foundation (KOSEF) through the Semiconductor Physics Research Center (SPRC).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectAMORPHOUS-SILICON-
dc.subjectHYDROGEN-
dc.titleMicrocrystalline silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using helium gas-
dc.typeArticle-
dc.identifier.wosidA1996VM31000004-
dc.identifier.scopusid2-s2.0-0030261925-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue10A-
dc.citation.beginningpage1241-
dc.citation.endingpage1244-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorShin, Sung-Chul-
dc.contributor.nonIdAuthorLee, KE-
dc.contributor.nonIdAuthorLee, WH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorECR-PCVD-
dc.subject.keywordAuthorlayer-by-layer technique-
dc.subject.keywordAuthormicrocrystalline silicon-
dc.subject.keywordPlusAMORPHOUS-SILICON-
dc.subject.keywordPlusHYDROGEN-
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