Investigation of resistive probes with high sensitivity

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Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO™). Enhancement probe and 1-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
Publisher
IEEE
Issue Date
2008-06
Language
English
Citation

IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

DOI
10.1109/SNW.2008.5418407
URI
http://hdl.handle.net/10203/238146
Appears in Collection
MS-Conference Papers(학술회의논문)
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