DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, Myung Hoon | ko |
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Lee, Khang June | ko |
dc.contributor.author | Shin, Gwang Hyuk | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2018-01-22T02:06:12Z | - |
dc.date.available | 2018-01-22T02:06:12Z | - |
dc.date.created | 2017-09-10 | - |
dc.date.created | 2017-09-10 | - |
dc.date.created | 2017-09-10 | - |
dc.date.created | 2017-09-10 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v.27, no.43, pp.1703545 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10203/237194 | - |
dc.description.abstract | Low-power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS2) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low-k tunneling on the dangling bond-free surface of MoS2 is a challenging task. Here, MoS2-based low-power nonvolatile charge storage memory devices are reported with a poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent-free initiated chemical vapor deposition (iCVD) process. The surface-growing polymerization and low-temperature nature of the iCVD process enable the conformal growing of low-k (≈2.2) pV3D3 insulating films on MoS2. The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈106), excellent retention times of 105 s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 103 cycles, which are much higher than those reported previously for MoS2-based memory devices. By leveraging the inherent flexibility of both MoS2 and polymer dielectric films, this research presents an important milestone in the development of low-power flexible nonvolatile memory devices. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Low-Power Nonvolatile Charge Storage Memory based on MoS2 and an Ultrathin Polymer Tunneling Dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000416693600004 | - |
dc.identifier.scopusid | 2-s2.0-85033803069 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 43 | - |
dc.citation.beginningpage | 1703545 | - |
dc.citation.publicationname | ADVANCED FUNCTIONAL MATERIALS | - |
dc.identifier.doi | 10.1002/adfm.201703545 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Woo, Myung Hoon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | charge storage memory | - |
dc.subject.keywordAuthor | gate coupling ratio | - |
dc.subject.keywordAuthor | low-k dielectrics | - |
dc.subject.keywordAuthor | low-power memory | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | DEVICES | - |
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